MFG:INFIN Package Cooled:06+ D/C:800/REEL
MFG: INFIN
Package Cooled: 06+
D/C: 800/REEL
Description: The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the...
The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313
| Symbol | Parameter | Ratings | Units |
| BVCES | Collector to Emitter Voltage | 1200 | V |
| IC25 IC110 |
Collector Current Continuous At TC = 25°C At TC = 110°C |
13 7 |
A |
| ICM | Collector Current Pulsed (Note 1) | 20 | A |
| VGES | Gate to Emitter Voltage Continuous | ±20 | V |
| VGEM | Gate to Emitter Voltage Pulsed | ±30 | V |
| SSOA | Switching SOA Operating Area at TJ = 150°C (Figure 2) | 13A at 1200V | W |
| PD | Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C |
104 0.83 |
W/°C |
| EAV | Forward Voltage Avalanche Energy (Note 2) | 18 | mJ |
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL,Tpkg | Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, see Tech Brief 334 |
300 260 |
°C °C |
| tSC | Short Circuit Withstand Time (Note 3) at VGE = 15V | 8 | µs |
HGT1S2N120CN
PDF/DataSheet Download
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high ...
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedan...
IGBT UFS N-CHAN 600V 45A TO-247
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S20N60C3S have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower...
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3RS demonstrate RUGGED performance capability when subjected to harsh SHORT CIR...
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3R demonstrate RUGGED performance capability when subjected to harsh SHORT CIRC...
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