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HGT1S3N60A4DS9A

IGBT Transistors 600V N-Channel IGBT SMPS Series

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SeekIC No. : 00143877 Detail

HGT1S3N60A4DS9A: IGBT Transistors 600V N-Channel IGBT SMPS Series

HGT1S3N60A4DS9A Data Sheet

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Part Number:
HGT1S3N60A4DS9A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 17 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 70 W Maximum Operating Temperature : + 150 C
Package / Case : TO-263AB-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3
Continuous Collector Current at 25 C : 17 A
Power Dissipation : 70 W


Parameters:

Technical/Catalog InformationHGT1S3N60A4DS9A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Power - Max70W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGT1S3N60A4DS9A
HGT1S3N60A4DS9A



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