HGTD3N60A4S

Continuous Collector Current at 25 C :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-252-3
Power Dissipation : 70 W


Features:

<sup><sub>• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .  70ns at TJ = 125oC
•12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"</sub></sup>

Specifications

_{Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified}

ALL TYPES			UNITS
Collector to Emitter Voltage	BVCES	600	V
Collector Current Continuous
At TC = 25oC	IC25	17	A
At TC = 110oC .	IC110	8	A
Collector Current Pulsed (Note 1)	ICM	40	A
Gate to Emitter Voltage Continuous	VGES	± 20	V
Gate to Emitter Voltage Pulsed	VGEM	± 30	V
Switching Safe Operating Area at TJ = 150oC, Figure 2	SSOA	15A at600V
Single Pulse Avalanche Energy at TC = 25oC.	EAS	12mJ at 3A
Power Dissipation Total at TC = 25oC	PD	70	W
Power Dissipation Derating TC > 25oC		0.56	W/oC
Operating and Storage Junction Temperature Range	TJ, TSTG	-55 to 150	oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	TL	300	oC
Package Body for 10s, See Tech Brief 334	TPKG	260	oC