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MFG:HARRIS Package Cooled:DIP/SOP D/C:08+
- Table of contents:
HGTD3N60B3S
-
Suppliers
DataSheet
General Description
HGTD3N60B3S Maximum Ratings
|
HGTD3N60B3S, |
|||
| Collector to Emitter Voltage |
BVCES |
600 |
V |
| Collector Current Continuous | |||
| At TC = 25oC |
IC25 |
7.0 |
|
| At TC = 110oC |
IC110 |
3.5 |
A |
| Collector Current Pulsed (Note 1) |
ICM |
20 |
A |
| Gate to Emitter Voltage Continuous |
VGES |
±20 |
V |
| Gate to Emitter Voltage Pulsed |
VGEM |
±30 |
V |
| Switching Safe Operating Area at TJ = 150oC (Figure 2) |
SSOA |
18A at 600V |
|
| Power Dissipation Total at TC = 25oC |
PD |
33.3 |
W |
| Power Dissipation Derating TC > 25oC |
0.27 |
W/oC | |
| Reverse Voltage Avalanche Energy |
EARV |
100 |
mJ |
| Operating and Storage Junction Temperature Range |
TJ, TSTG |
-55 to 150 |
oC |
| Maximum Lead Temperature for Soldering |
TL |
260 |
oC |
| Short Circuit Withstand Time (Note 2) at VGE = 12V |
tSC |
5 |
µs |
| Short Circuit Withstand Time (Note 2) at VGE = 10V |
tSC |
10 |
µs |
HGTD3N60B3S Features
• 7A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
HGTD3N60B3S
PDF/DataSheet Download
- Datasheet: HGTD3N60B3S
- File Size: 144930 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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