MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: IGBT UFS N-CH 600V 6A TO-252AA
| Technical/Catalog Information | HGTD3N60C3S9A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 3A |
| Power - Max | 33W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGTD3N60C3S9A HGTD3N60C3S9A |
HGTD3N60C3S9A
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The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. TheseHGTD3N60C3 and HGTD3N60C3S devices have thehigh input impedance of a MOSFET and the low on-state conduction loss of ...
The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The ...
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