Purchase HGTD7N60B3S, In-stock HGTD7N60B3S From SeekIC.
MFG:HARRIS Package Cooled:DIP/SOP D/C:08+
- Table of contents:
HGTD7N60B3S
-
Suppliers
DataSheet
General Description
HGTD7N60B3S Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C25
At T = 110 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at T = 150 °C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOAJ
Power Dissipation Total at T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating T > 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at V GE = 15V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at V GE = 10VSC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Collector Current Continuous
At T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C25
At T = 110 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at T = 150 °C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOAJ
Power Dissipation Total at T = 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating T > 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , TJ STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at V GE = 15V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at V GE = 10VSC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
HGTD7N60B3S Features
14A, 600V, T C = 25 °C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150° C
Short Circuit Rating
Low Conduction Loss
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150° C
Short Circuit Rating
Low Conduction Loss
HGTD7N60B3S
PDF/DataSheet Download
- Datasheet: HGTD7N60B3S
- File Size: 95124 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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