HGTD7N60C3S Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At T C = 110° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150 °C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating T > 25° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , T STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at V GE = 15V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V SC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
HGTD7N60C3S Features
14A, 600V at T C = 25 oC
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150 oC
Short Circuit Rating
Low Conduction Loss

- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB

- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB

- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB

- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB

- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB

- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB

- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB

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