Purchase HGTD8P50G1,HGTD8P50G1S, In-stock HGTD8P50G1,HGTD8P50G1S From SeekIC.
Part Number: HGTD8P50G1,HGTD8P50G1S
Description: The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (...
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HGTD8P50G1,HGTD8P50G1S
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DataSheet
General Description
HGTD8P50G1,HGTD8P50G1S General Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.
HGTD8P50G1,HGTD8P50G1S Maximum Ratings
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous
At T = +25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC C25
At T C = +90 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +25o C, V CL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -3
With 0.1F Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-18
Power Dissipation Total at T C = +25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating T > +25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . .T J , TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous
At T = +25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC C25
At T C = +90 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +25o C, V CL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -3
With 0.1F Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-18
Power Dissipation Total at T C = +25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating T > +25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . .T J , TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
HGTD8P50G1,HGTD8P50G1S Features
8A, 500V
3.7V V
CE(SAT)
Typical Fall Time - 1800ns
High Input Impedance
TJ = +150 oC
3.7V V
CE(SAT)
Typical Fall Time - 1800ns
High Input Impedance
TJ = +150 oC
HGTD8P50G1,HGTD8P50G1S Connection Diagram
HGT1N30N60A4D
PDF/DataSheet Download
- Datasheet: HGT1N30N60A4D
- File Size: 147560 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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