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HGTD8P50G1,HGTD8P50G1S

Features: 8A, 500V3.7V VCE(SAT)Typical Fall Time - 1800nsHigh Input ImpedanceTJ = +150 oCPinoutSpecificationsCollector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCESEmitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004362145 Detail

HGTD8P50G1,HGTD8P50G1S: Features: 8A, 500V3.7V VCE(SAT)Typical Fall Time - 1800nsHigh Input ImpedanceTJ = +150 oCPinoutSpecificationsCollector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . ...

HGTD8P50G1,HGTD8P50G1S Data Sheet

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Part Number:
HGTD8P50G1,HGTD8P50G1S
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

8A, 500V
3.7V V
CE(SAT)
Typical Fall Time - 1800ns
High Input Impedance
TJ = +150 oC



Pinout

Connection Diagram


Specifications

Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous
At T  = +25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC C25
At T C  = +90 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC   = +25o C, V CL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -3
With 0.1F Capacitor, Figure 17 - Circuit 2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-18
Power Dissipation Total at T C  = +25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating T  > +25 oC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . .T J , TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T


Description

The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and HGTD8P50G1 and the HGTD8P50G1S are ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.




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