HIP2060

Features:

• Two 10A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.135 Max Per Transistor at V_GS = 15V
• rDS(ON) . . . . . . 0.15 Max Per Transistor at V_GS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation


Specifications

Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . .V_DS                     60 V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  V_DGR                     60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  V_GS                   ±20 V
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SD                      10 A
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM                      25 A
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I_DS                       10 A
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS                    100 m_J
Continuous Power Dissipation at T_C = 25(Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . .  . .  P_D                       46 W
Continuous Power Dissipation, Derate above T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  0.37                       W/
Thermal Information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . q_JA                 60   /W
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  T_C          -40 to 125  
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG         -40 to 150  
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L                    300  
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . . . . . .V_D1S2                        60 V 


Description

The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier.