HIR333

Series: -
Current - DC Forward (If): 100mA
Orientation: Top View
Wavelength: 850nm
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: Radial
Viewing Angle: 30°
Manufacturer: Everlight Electronics Co Ltd
Voltage - Forward (Vf) Typ: 1.45V
Radiant Intensity (Ie) Min @ If: 15mW/sr @ 20mA


Features:

`High reliability
`High radiant intensity
`Peak wavelength p=850nm
`2.54mm Lead spacing
`Low forward voltage
`Pb free
`The product itself will remain within RoHS compliant version.




Application

·Free air transmission system
·Optoelectronic switch
·Floppy disk drive
·Infrared applied system
·Smoke detector




Specifications

Parameter	Symbol	Absolute Maximum Rating	Unit
Continuous Forward Current	IF	100	mA
Pulse Forward Current	IFP	1.0	mA
Operating Temperature	Topr	-40 ~ +85
Storage Temperature	Tstg	-40 ~ +85
Soldering Temperature	Tsol	260
Power Dissipation at(or below) 25Free Air Temperature	Pd	150	mW
Reverse Voltage	VR	5	V

Notes: *1:IFP Conditions--Pulse Width100s and Duty1%.
*2:Soldering time5 seconds.




Description

EVERLIGHT'S Infrared Emitting Diode(HIR333) is a high intensity diode , molded in a yellow transparent plastic package.

The HIR333 is spectrally matched with phototransistor , photodiode and infrared receiver module.