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HIR383L212

Features: `High reliability`High radiant intensity`Peak wavelength p=850nm`2.54mm Lead spacing`Low forward voltage`Pb free`The product itself will remain within RoHS compliant version.ApplicationInfrared applied systemSpecifications Parameter Symbol Rating Unit Forward Current...

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SeekIC No. : 004362808 Detail

HIR383L212: Features: `High reliability`High radiant intensity`Peak wavelength p=850nm`2.54mm Lead spacing`Low forward voltage`Pb free`The product itself will remain within RoHS compliant version.ApplicationInf...

HIR383L212 Data Sheet

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Part Number:
HIR383L212
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`High reliability
`High radiant intensity
`Peak wavelength p=850nm
`2.54mm Lead spacing
`Low forward voltage
`Pb free
`The product itself will remain within RoHS compliant version.




Application

Infrared applied system


Specifications

Parameter
Symbol
Rating
Unit
Forward Current
IF
25
mA
Operating Temperature
Topr
-40 to +100
Storage Temperature
Tstg
-40 to +100
Soldering Temperature *2
Tsol
260
Power Dissipation
Pd
150
mW
Peak Forward Current *1
IFP
1.0
A
Reverse Voltage
VR
5
V


Notes: *1:IFP Conditions--Pulse Width100s and Duty1%.
*2:Soldering time5 seconds.




Description

`EVERLIGHT's Infrared Emitting Diode(HIR383C/L212) is a high intensity diode , molded in a water clear plastic package. The device is spectrally matched with phototransistor , photodiode and infrared receiver module.




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