HIR7373C

Wavelength :
Beam Angle :
Radiant Intensity :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
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Features:

`High reliability
`High radiant intensity
`Peak wavelength p=850nm
`2.54mm Lead spacing
`Low forward voltage
`Pb free
`The product itself will remain within RoHS compliant version.




Application

·Free air transmission system
·Optoelectronic switch
·Floppy disk drive
·Infrared applied system
·Smoke detector




Specifications

Parameter	Symbol	Absolute Maximum Rating	Unit
Forward Current	IF	100	mA
Peak Forward Current *1	IFP	1.0
Operating Temperature	Topr	-40 ~ +85
Storage Temperature	Tstg	-40 ~ +85
Soldering Temperature *2	Tsol	260
Power Dissipation	Pd	150	mW
Reverse Voltage	VR	5	V

Notes: *1:IFP Conditions--Pulse Width100s and Duty1%.
*2:Soldering time5 seconds.




Description

EVERLIGHT'S Infrared Emitting Diode(HIR7373C) is a high intensity diode , molded in a water clear plastic package.

The HIR7373C device is spectrally matched with phototransistor , photodiode and infrared receiver module.