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HIRF830

Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V ID Drain to Current (Continuous) ...

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SeekIC No. : 004362818 Detail

HIRF830: Features: • Dynamic dv/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive RequirementsSpecifications Symbol Parameter V...

HIRF830 Data Sheet

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Part Number:
HIRF830
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements


Specifications

Symbol
 Parameter
Value
Units
VDSS
 Drain-Source Voltage
500
V
ID
 Drain to Current (Continuous)
4.5
A
IDM
 Drain to Current (Pulsed) (*1)
18
A
VGS
 Gate-to-Source Voltage (Continue)
±20
V
PD
 Total Power Dissipation
TO-220AB
TO-220FP
74
38
W
Derate above 25°C
TO-220AB
TO-220FP
0.59
0.3
W/°C
EAS
 Single Pulse Avalanche Energy (*2)
250
mJ
IAR
 Avalanche Current (*1)
9
A
EAR
 Repetitive Avalanche Energy (*1)
7.4
mJ
dv/dt
 Peak Diode Recovery (*3)
5
V/ns
Tj
 Operating Temperature Range
-55 to 150
°C
Tstg
 Storage Temperature Range
-55 to 150
°C
TL
 Maximum Lead Temperature for Soldering Purposes, 1/8" from
case for 10 seconds
300
°C



Description

This HIRF830 N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.




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