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HL7852G
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DataSheet
General Description
HL7852G Maximum Ratings
| Item | Symbol | Value | Unit |
| Optical output power | PO | 50 | mW |
| Pulse optical output power | PO(Puise) | 60*1 | mW |
| LD reverse voltage | VR(LD) | 2 | V |
| PD reverse voltage | VR(PD) | 30 | V |
| Operating temperature | Topr | 10 to +60 | |
| Storage temperature | Tstg | 40 to +85 |
HL7852G Features
` Visible light output: p = 785 nm Typ
` Small beam ellipticity: 9.5:23
` High output power: 50 mW (CW)
` Built-in monitor photodiode
` Small beam ellipticity: 9.5:23
` High output power: 50 mW (CW)
` Built-in monitor photodiode
HL7852G Typical Application
The HL7852G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability.
HL7852G
PDF/DataSheet Download
- Datasheet: HL7852G
- File Size: 22967 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
- ·HL7851G
- HITACHI [Hitachi Semiconductor]
- GaAlAs Laser Diode
- 21761 KB
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- HITACHI [Hitachi Semiconductor]
- Visible High Power Laser Diode
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