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Part Number: HL8333G
Description: The HL8333G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. ...
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HL8333G
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DataSheet
General Description
HL8333G General Description
The HL8333G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment
HL8333G Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Optical output power | PO | 90 | mW |
| Pulse optical output power | PO(pulse) | 50 | mW |
| LD reverse voltage | VR(LD) | 2 | V |
| PD reverse voltage | VR(PD) | 30 | V |
| Operating temperature | Topr | 10 to +60 | |
| Storage temperature | Tstg | 40 to +85 |
HL8333G Features
• Infrared light output: p = 820 to 840 nm
• High power:
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
• High power:
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
HL8325G
PDF/DataSheet Download
- Datasheet: HL8325G
- File Size: 22065 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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