HLB122D General Description
The HLB122D is a medium power transistor designed for use in switching applications.
HLB122D Maximum Ratings
• Maximum Temperatures
Storage Temperature .................................................................... -55 ~ +150
Junction Temperature .............................................................................. +150
• Maximum Power Dissipation
Total Power Dissipation (TC=25) .............................................................. 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................. 600 V
BVCEO Collector to Emitter Voltage............................................................. 400 V
BVEBO Emitter to Base Volta 6 V
IC Collector Current (DC) ......................................................................... 800 mA
IC Collector Current ................................................................................1600 mA
IB Base Current (DC)................................................................................. 100 mA
IB Base Current (Pulse)............................................................................................ 200 mA
HLB122D Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
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