HM-883

• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby and Operating Power
- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100A
- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . . .120ns
• Industry Standard Pinout
• Single 5.0V Supply
• CMOS/TTL Compatible Inputs
• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads
• Synchronous Operation
• On-Chip Address Latches
• Separate Output Enable
• Operating Temperature Range . . . . . . -55 to +125

The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs.

The HM-6617/883 utilizes a synchronous design technique.This includes on-chip address latches and a separate output
enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined with the Intersil advanced self-aligned silicon gate CMOS process technology offers ultra-low standby current. Low ICCSB is ideal for battery applications or other systems with low power requirements.

The Intersil NiCr fuse link technology is utilized on this and other HM-6617/883 Intersil CMOS PROMs. This gives the user a PROM with permanent, stable storage characteristics over the full industrial and military temperature voltage ranges. NiCr fuse technology combined with the low power characteristics of CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs.