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Part Number: HM64YLB36514

 

 

 

 

Description: The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized hig...


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HM64YLB36514 General Description


The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119- bump BGA.

Note: All power supply and ground pins must be connected for proper operation of the device.

HM64YLB36514 Maximum Ratings

Parameter
Symbol
Rating
Unit
Notes
Input voltage on any pin
VIN
−0.5 to VDDQ + 0.5
V
1, 4
Core supply voltage
VDD
−0.5 to +3.13
V
1
Output supply voltage
VDDQ
−0.5 to +2.1
V
1, 4
Operating temperature
TOPR
0 to +85
Storage temperature
TSTG
−55 to +125
Output short-circuit current
IOUT
25
mA
Latch up current
ILI
200
mA
Package junction to top thermal resistance
J-top
6.5
/W
5
Package junction to board thermal resistance
J-board
12
/W
5

HM64YLB36514 Features

• 2.5 V ± 5% operation and 1.5 V (VDDQ)
• 16M bit density
• Internal self-timed late write
• Byte write control (4 byte write selects, one for each 9-bit)
• Optional ×18 configuration
• HSTL compatible I/O
• Programmable impedance output drivers
• Differential pseudo-HSTL clock inputs
• Asynchronous G output control
• Asynchronous sleep mode
• FC-BGA 119pin package with SRAM JEDEC standard pinout
• Limited set of boundary scan JTAG IEEE 1149.1 compatible
• Protocol: Single differential clock register-latch mode

HM64YLB36514 datasheet

HM6116
PDF/DataSheet Download

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