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HMBT28S

Features: • Excellent hFE Linearity• High DC Current Gain• High Power DissipationSpecifications• Maximum TemperaturesStorage Temperature .................................................................................... -55 ~ +150 Junction Temperature .......................

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SeekIC No. : 004363652 Detail

HMBT28S: Features: • Excellent hFE Linearity• High DC Current Gain• High Power DissipationSpecifications• Maximum TemperaturesStorage Temperature ........................................

HMBT28S Data Sheet

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Part Number:
HMBT28S
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Excellent hFE Linearity
• High DC Current Gain
• High Power Dissipation


Specifications

• Maximum Temperatures
Storage Temperature .................................................................................... -55 ~ +150
Junction Temperature ................................................................................ 150 Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25) ......................................................................... 225 mW
• Maximum Voltages and Currents (TA=25)
VCBO Collector to Base Voltage ................................................................................... 40 V
VCEO Collector to Emitter Voltage ............................................................................... 20 V
VEBO Emitter to Base Voltage ....................................................................................... 6 V
IC Collector Current ................................................................................................. 1.25 A
IB Base Current ......................................................................................................... 0.4 A


Description

The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier applications




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