HMC261LM1

Features:

·SMT mmWAVE PACKAGE
·13 dB GAIN
·P1dB OUTPUT POWER: +12 dBm
·SINGLE POSITIVE SUPPLY : +3V to +4V
·NO GATE BIAS


Specifications

Supply Voltage(Vdd)	+5.5Vdc
Input Power(RFin) (Vdd = +3V)	+16dBm
Channel Temperture(Tc)	175
Thermal Resistance(jc)	90/W
Storage Temperate	-65 to +150
Operating Temperature	-55 to +85

Description

The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 13 dB gain and +14 dBm saturated output power from a bias supply of +4V @ 75 mA. The packaged amplifier enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC261LM1 eliminates the need for wirebonding, thereby providing a consistentconnection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. This part replaces the HMC261CB1 by offering more bandwidth and gain.