Features: ·SMT mmWAVE PACKAGE·EXCELLENT NOISE FIGURE : 2.6 dB·15 dB GAIN·P1 dB OUTPUT POWER: +13 dBmSpecifications Supply Voltage(Vdd) +4.5 Vdc Supply Current(ldd) 50mA Gate Bias Voltage(Vgg1 & 2) -2.0 to 0.0 Vdc DC Gate Current(lgg1 & 2) 4mA Input Power (RFi...
HMC268LM1: Features: ·SMT mmWAVE PACKAGE·EXCELLENT NOISE FIGURE : 2.6 dB·15 dB GAIN·P1 dB OUTPUT POWER: +13 dBmSpecifications Supply Voltage(Vdd) +4.5 Vdc Supply Current(ldd) 50mA Gate Bias V...
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Supply Voltage(Vdd) |
+4.5 Vdc |
Supply Current(ldd) |
50mA |
Gate Bias Voltage(Vgg1 & 2) |
-2.0 to 0.0 Vdc |
DC Gate Current(lgg1 & 2) |
4mA |
Input Power (RFin)(Vdd)=+4,RF Power applied 1
| +15 Dbm |
Current Temperature(TC) |
175 |
Thermal Resisitance(jc)(Channel Backside) |
289/W |
Storage Temperature |
-65 to +150 |
Operating Temperature |
-55 to +85 |
The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. The packaged LNA enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture.