HMC268LM1

Features: ·SMT mmWAVE PACKAGE·EXCELLENT NOISE FIGURE : 2.6 dB·15 dB GAIN·P1 dB OUTPUT POWER: +13 dBmSpecifications Supply Voltage(Vdd) +4.5 Vdc Supply Current(ldd) 50mA Gate Bias Voltage(Vgg1 & 2) -2.0 to 0.0 Vdc DC Gate Current(lgg1 & 2) 4mA Input Power (RFi...

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SeekIC No. : 004363801 Detail

HMC268LM1: Features: ·SMT mmWAVE PACKAGE·EXCELLENT NOISE FIGURE : 2.6 dB·15 dB GAIN·P1 dB OUTPUT POWER: +13 dBmSpecifications Supply Voltage(Vdd) +4.5 Vdc Supply Current(ldd) 50mA Gate Bias V...

floor Price/Ceiling Price

Part Number:
HMC268LM1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

·SMT mmWAVE PACKAGE
·EXCELLENT NOISE FIGURE : 2.6 dB
·15 dB GAIN
·P1 dB OUTPUT POWER: +13 dBm



Specifications

Supply Voltage(Vdd)
+4.5 Vdc
Supply Current(ldd)
50mA
Gate Bias Voltage(Vgg1 & 2)
-2.0 to 0.0 Vdc
DC Gate Current(lgg1 & 2)
4mA
Input Power (RFin)(Vdd)=+4,RF Power applied 1
+15 Dbm
Current Temperature(TC)
175
Thermal Resisitance(jc)(Channel Backside)
289/W
Storage Temperature
-65 to +150
Operating Temperature
-55 to +85



Description

The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. The packaged LNA enables economical PCB SMT assembly for millimeterwave point-to-point radios, LMDS, and SATCOM applications. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture.




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