Features: ·EXCELLENT NOISE FIGURE: 2.5 dB·STABLE GAIN vs. TEMPERATURE: 22 dB ± 2 dB·WIDEBAND PERFORMANCE: 18 - 32 GHz·SMALL SIZE: 0.97 mm x 1.67 mmSpecifications Supply Voltage (Vdd) +5 Vdc Supply Current (Idd) 120 mA Gate Bias Voltage (Vgg) -2 to +0.4V DC Gate Curre...
HMC281: Features: ·EXCELLENT NOISE FIGURE: 2.5 dB·STABLE GAIN vs. TEMPERATURE: 22 dB ± 2 dB·WIDEBAND PERFORMANCE: 18 - 32 GHz·SMALL SIZE: 0.97 mm x 1.67 mmSpecifications Supply Voltage (Vdd) +5 Vd...
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Supply Voltage (Vdd) |
+5 Vdc |
Supply Current (Idd) |
120 mA |
Gate Bias Voltage (Vgg) |
-2 to +0.4V |
DC Gate Current (mA) |
4 mA |
Input Power (RFin) (Vdd=+3V) |
-5 dBm |
Channel Temperature (Tc) |
175 |
Thermal Resistance (Channel Backside) (jc) |
74 /W |
Storage Temperature |
-65 to +150 |
Operating Temperature |
-55 to +85 |
The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 18 to 32 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.62 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a bias supply of +3.5V @ 60mA with a noise figure of 2.5 dB. This LNA can be used in millimeterwave point-to-point radios, LMDS, VSAT, and other SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via ribbon bonds of minimal length. The HMC281 may be used in conjunction with HMC143, HMC203, HMC258, HMC264, or HMC265 mixers to realize a microwave or millimeterwave system receiver.