Features: High Gain: 21 dBPsat Output Power: +21 dBmWideband Performance: 17 - 40 GHzSmall Chip Size: 0.88 mm x 1.72 mmApplicationThe HMC283 MPA is ideal for:• Millimeterwave Point-to-Point Radios• VSAT• SATCOMSpecifications Drain Bias Voltage (Vdd1, Vdd2...
HMC283: Features: High Gain: 21 dBPsat Output Power: +21 dBmWideband Performance: 17 - 40 GHzSmall Chip Size: 0.88 mm x 1.72 mmApplicationThe HMC283 MPA is ideal for:• Millimeterwave Point-to-Point Ra...
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Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) | +5.0 Vdc |
Drain Bias Current (Idd) | 400 mA |
Gate Bias Voltage (Vgg1, Vgg2, Vgg3, Vgg4) | -2 to +0.4Vdc |
Gate Bias Current (Igg) | 4 mA |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +10 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T = 85 °C) (derate 13.04 mW/°C above 85 °C) |
1.174 W |
Thermal Resistance (channel to lead) |
76.7 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -55 to +85 °C |
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifi er (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.62 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fi xture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).