HMC283LM1

Features:

SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required


Application

The HMC283LM1 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• SATCOM


Pinout




Specifications

Drain Bias Voltage (Vdd)	+5.0 Vdc
Drain Bias Current (Idd)	400 mA
Gate Bias Voltage (Vgg1, Vgg2)	-2.0 to +0.4 Vdc
Gate Bias Current (Igg)	4.0 mA
RF Input Power (RFin)(Vdd = +3.5 Vdc)	+10 dBm
Channel Temperature	175 °C
Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C)	1.44 W
Thermal Resistance (channel to ground paddle)	62.5 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

Description

The HMC283LM1 is a Medium Power Amplifi er (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. The amplifi er may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave output power. All data is with the non-hermetic, epoxy sealed LM1 packaged MPA device mounted in a 50 ohm test fi xture.