DescriptionThe HMC736LP4 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC736LP4(E) integrates a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due ...
HMC736LP4: DescriptionThe HMC736LP4 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC736LP4(E) integrates a resonator, negative resistance device, varactor diode and feature half freque...
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The HMC736LP4 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC736LP4(E) integrates a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure.
The features of HMC736LP4 are as follows: (1)Dual Output: Fo = 14.5 - 15.0 GHz, Fo/4 = 7.25 - 7.5 GHz; (2)Pout: +9 dBm; (3)Phase Noise: -105 dBc/Hz @ 100 kHz Typ.; (4)No External Resonator Needed; (5)32 Lead 5x5mm SMT Package: 16mm2.
The electrical characteristics of the HMC736LP4 are: (1)Frequency Range: Fo 14.5 - 15.0 GHz, Fo/4 7.25 - 7.5 GHz; (2)Power Output: RFOUT 6 to 13 dBm, RFOUT/4 -8 to 2 dBm; (3)SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT: -105 dBc/Hz; (4)Tune Voltage Vtune: 1 to 13 V; (5)Supply Current Icc(Dig) + Icc(Amp) + Icc(RF): 120 to 180 mA; (6)Tune Port Leakage Current (Vtune= 13V): 10 A; (7)Output Return Loss (RFOUT): 2.5 dB.