HMC754S8GE

DescriptionThe HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic SOIC-8, for use with both amplifi ers combined in push-pull confi guration using external baluns to c...

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SeekIC No. : 004364443 Detail

HMC754S8GE: DescriptionThe HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic S...

floor Price/Ceiling Price

Part Number:
HMC754S8GE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Description

The HMC754S8GE is a GaAs/InGaP HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 1 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic SOIC-8, for use with both amplifi ers combined in push-pull confi guration using external baluns to cancel out second order non-linearities and improve IP2 performance.

The features of HMC754S8GE are as follows: (1)Output IP2: +78 dBm; (2)High Gain: 14.5 dB; (3)High Output IP3: +38 dBm; (4)75 Ohm Impedance; (5)Single Positive Supply: +5V; (6)Robust 1000V ESD, Class 1C; (7)SOIC-8 SMT Package.

The electrical characteristics of the HMC754S8GE are: (1)Gain: 14.7dB at 0.05 - 0.5 GHz, 14.2dB at 0.5 - 0.87 GHz, 13.4dB at 0.87 - 1.0 GHz; (2)Gain Variation Over Temperature: 0.008 dB/ °C at 0.05 - 0.87 GHz; (3)Input Return Loss: 10dB at 0.05 - 0.5 GHz, 20dB at 0.5 - 0.87 GHz; (4)Output Return Loss: 10dB at 0.05 - 0.5 GHz, 10dB at 0.5 - 0.87 GHz; (5)Reverse Isolation: 23 dB at 0.05 - 0.87 GHz; (6)Output Power for 1 dB Compression (P1dB): 21 dBm at 0.05 - 0.87 GHz.




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