Features: ·Fast Page Mode operation·CAS-before-RAS refresh capability·RAS-only and Hidden refresh capability·Fast parallel test mode capability·TTL(5V) compatible inputs and outputs·Early write or output enable controlled write·Available in 20pin ZIP packages·Single +5V± 10% power supply·1,024 Ref...
HMD1M1Z1: Features: ·Fast Page Mode operation·CAS-before-RAS refresh capability·RAS-only and Hidden refresh capability·Fast parallel test mode capability·TTL(5V) compatible inputs and outputs·Early write or o...
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Features: ` Part Indentification- HMD1M32M2EG Gold plate Lead` 72 pins Single In-Line Package` ED...
Features: · 72 pins Single In-Line Package· Fast Page Mode Capability· Single +5V± 0.5V power supp...
DescriptionThe HMD16M64D16EV is a 16Mx64bits Dynamic RAM high density memory module. The device co...
SYMBOL |
PARAMETER |
RATING |
UNIT |
TA |
Ambient Temperature under Bias |
0 ~ 70 |
C |
TSTG |
Storage Temperature (Plastic) |
-55 ~ 150 |
C |
VIN/VOUT |
Voltage on any Pin Relative to Vss |
-1.0 ~ 7.0 |
V |
VCC |
Power Supply Voltage |
-1.0 ~ 7.0 |
V |
IOUT |
Short Circuit Output Current |
50 |
mA |
PD |
Power Dissipation |
600 |
mW |
The HMD1M1Z1 is an 1M x 1 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package type (ZIP) are optional features of this Module.
The HMD1M1Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
The HMD1M1Z1 is optimized for application to the systems, which are required high density and large capacity such as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD1M1Z1 provides common data and outputs.