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HMD4M64D16EV

Features: · Part Identification HMD4M64D16EV --- 4KCycles/64ms Ref, Gold Plate Lead· High-density 32MByte design· New JEDEC standard proposal without buffer· CAS-before-RAS Refresh capability· RAS-only and Hidden refresh capability· Single +3.3± 0.3V power supply· EDO mode operation.· LVTTL compat...

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SeekIC No. : 004364633 Detail

HMD4M64D16EV: Features: · Part Identification HMD4M64D16EV --- 4KCycles/64ms Ref, Gold Plate Lead· High-density 32MByte design· New JEDEC standard proposal without buffer· CAS-before-RAS Refresh capability· RAS-o...

HMD4M64D16EV Data Sheet

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Part Number:
HMD4M64D16EV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Part Identification
      HMD4M64D16EV --- 4KCycles/64ms Ref, Gold Plate Lead
· High-density 32MByte design
· New JEDEC standard proposal without buffer
· CAS-before-RAS Refresh capability
· RAS-only and Hidden refresh capability
· Single +3.3± 0.3V power supply
· EDO mode operation.
· LVTTL compatible inputs and outputs
· FR4-PCB design
· Access times : 50, 60ns
· Timing          · Marking
50ns access         -5
60ns access         -6
· Packages     · Marking
168-pin DIMM        D


Specifications

PARAMETER


Voltage on Any Pin Relative to Vss

Voltage on Vcc Supply Relative to Vss

Power Dissipation

Storage Temperature

Short Circuit Output Current		 SYMBOL


VIN ,OUT

Vcc

PD

TSTG

IOS		 RATING


-0.5V to 4.6V

-0.5V to 4.6V

16W

-55 to 150

50mA

` Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The HMD4M64D16EV is a 4Mx64bits Dynamic RAM high density memory module. It consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. It is a Dual Inline Memory Module and is intended for mounting into 168 pin edge connector sockets.




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