HMD4M72D18EV

DescriptionThe HMD4M72D18EV is a 4Mx72bits Dynamic RAM high density memory module. The device consists of eighteen CMOS 4Mx4bits DRAMs in SOJ/TSOPII 400mil packages mounted on a 168-pin glass-epoxy substrate. It is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connect...

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SeekIC No. : 004364636 Detail

HMD4M72D18EV: DescriptionThe HMD4M72D18EV is a 4Mx72bits Dynamic RAM high density memory module. The device consists of eighteen CMOS 4Mx4bits DRAMs in SOJ/TSOPII 400mil packages mounted on a 168-pin glass-epoxy ...

floor Price/Ceiling Price

Part Number:
HMD4M72D18EV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Description

The HMD4M72D18EV  is a 4Mx72bits Dynamic RAM high density memory module. The device consists of eighteen CMOS 4Mx4bits DRAMs in SOJ/TSOPII 400mil packages mounted on a 168-pin glass-epoxy substrate. It is a Dual  In-line Memory Module and is intended for mounting into 168 pin edge connector sockets.

The features of HMD4M72D18EV can be summarized as:(1)High-density 32MByte design; (2)New JEDEC standard proposal without buffer; (3)CAS-before-RAS Refresh capability; (4)RAS-only and Hidden refresh capability ; (5)Single +3.3± 0.3V power supply; (6)EDO mode operation; (7)LVTTL compatible inputs and outputs; (8)FR4-PCB design; (9)Access times : 50, 60ns.

The absolute maximum ratings of HMD4M72D18EV are:(1)Voltage on Any Pin Relative to Vss:-0.5V to 4.6V ; (2)Voltage on Vcc Supply Relative to Vss:-0.5V to 4.6V ; (3)Power Dissipation:18W ; (4)Storage Temperature:-55°C to 150°C; (5)Short Circuit Output Current:50mA.

If you want to know more information such as the electrical characteristics about the HMD4M72D18EV, please download the datasheet in www.seekic.com or www.chinaicmart.com .    




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