HMJ1

Product :
RF Frequency :
IF Frequency :
LO Frequency :
Power Gain :
P1dB :
Operating Supply Current :
Maximum Power Dissipation :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Operating Supply Voltage : 3 V
Package / Case : SMD


Features:

• +39 dBm IIP3
• No External Matching Elements Required
• RF 750-1000 MHz
• LO 680-980 MHz
• IF 20-100 MHz
• +17 dBm Drive Level
• +3V Bias (23 mA)
• Low-Cost Surface Mount J-Lead Package


Specifications

Operating Case Temperature.................. -40 to +85°C
Storage Temperature............................  -55 to +125°C
Maximum Input Power......................................... 25 dBm


Description

The HMJ1 is a high dynamic range, GaAs FET mixer. This active FET realizes a typical third order intercept point of +39 dBm at an LO drive level of +17 dBm. It comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in cellular communications systems.