HMN12816D

The HMN12816D 128K x 16 nonvolatile SRAM's are 2,097,152-bit fully static, nonvolatile SRAM's, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

The HMN12816D uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.