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Description: The HMN2568D Nonvolatile SRAM is a 2,097,152-bit static RAM organized as 262,144 bytes by 8 bits.<...


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HMN2568D General Description


The HMN2568D Nonvolatile SRAM is a 2,097,152-bit static RAM organized as 262,144 bytes by 8 bits.

The HMN2568D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.

The HMN2568D uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

HMN2568D Maximum Ratings

PARAMETER SYMBOL TSOLDER CONDITIONS
DC voltage applied on VCC relative to VSS VCC -0.3V to 7.0V  
DC voltage applied on VCC relative to VSS VT -0.3V to 7.0V VT VCC+0.3
Operating temperature TOPR 0 to 70
-40 to 85
Commercial
Industrial
Storage temperature TSTG -40 to 85  
Temperature under bias TBIAS -10 to 70  
Soldering temperature TSOLDER 260 For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

HMN2568D Features

· Access time : 70, 85, 120, 150 ns
· High-density design : 2Mbit Design
· Battery internally isolated until power is applied
· Industry-standard 32-pin 256K x 8 pinout
· Unlimited write cycles
· Data retention in the absence of VCC
·10-years minimum data retention in absence of power
· Automatic write-protection during power-up/power-down cycles
· Data is automatically protected during power loss
· Conventional SRAM operation; unlimited write cycles

HMN2568D Connection Diagram

HMN2568D  Connection Diagram

HMN2568D datasheet

HMN12816D
PDF/DataSheet Download

Find HMN2568D Suppliers

  • ·HMN12816D-120
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-120 Datasheet Download
  • ·HMN12816D-120I
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-120I Datasheet Download
  • ·HMN12816D-150
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-150 Datasheet Download
  • ·HMN12816D-150I
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-150I Datasheet Download
  • ·HMN12816D-70
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-70 Datasheet Download
  • ·HMN12816D-70I
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-70I Datasheet Download
  • ·HMN12816D-85
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-85 Datasheet Download
  • ·HMN12816D-85I
  • ETC [ETC] 
  • Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 
  • 147153 KB
  • HMN12816D-85I Datasheet Download

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