HMPSA42

DescriptionThe HMPSA42 is a kind of NPN epitaxial planar high voltage silicon transistor which is made by the MICROELECTRONICS CORP. The HMPSA42 has some features as follows. (1) high collector-emitter breakdown voltage; (2) low collector-emitter saturation voltage; (3) for complementary with PNP...

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SeekIC No. : 004364788 Detail

HMPSA42: DescriptionThe HMPSA42 is a kind of NPN epitaxial planar high voltage silicon transistor which is made by the MICROELECTRONICS CORP. The HMPSA42 has some features as follows. (1) high collector-emi...

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Part Number:
HMPSA42
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
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  • 15 Days
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Upload time: 2024/4/28

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Description



Description

The HMPSA42 is a kind of NPN epitaxial planar high voltage silicon transistor which is made by the MICROELECTRONICS CORP.

The HMPSA42 has some features as follows. (1) high collector-emitter breakdown voltage; (2) low collector-emitter saturation voltage; (3) for complementary with PNP type HMPSA92.

The following is the description about HMPSA42's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 300 V and collector to emitter voltage(VCEO) is 300 V,emitter to base voltage(VEBO) is 6 V; (4): IC collector current is 500 mA; (5): the minimum BVCBO is 300 V when IC is 100 A and IE is 0 ; (6): the minimum BVCEO is 300 V when IC is 1 mA and IB is 0,and BVEBO is 6 V at IE is 10 A and IC is 0; (7): the maximum ICBO is 100 nA when VCB is 260 V and IE is 0,IEBO is 100 nA at VEB is 6 V and IC is 0; (8): the maximum VCE(sat) is 350 mV at the condition of IC is 20 mA and IB is 2 mA; (9): the minimum fT is 50 MHz at IC is 10 mA,VCE is 20 V and f is 100 MHz. If you want to know more information about the HMPSA42 ,please download the datasheet at www.seekic.com.




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