HMPSA43-NS

DescriptionThe HMPSA43-NS belongs to the HMPSA43 series. It is a NPN high voltage silicon transistor which is made by the MICROELECTRONICS CORP. The HMPSA43-NS hassome features as follows. (1) high collector-emitter breakdown voltage; (2) low collector-emitter saturation voltage; (3) for compleme...

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SeekIC No. : 004364789 Detail

HMPSA43-NS: DescriptionThe HMPSA43-NS belongs to the HMPSA43 series. It is a NPN high voltage silicon transistor which is made by the MICROELECTRONICS CORP. The HMPSA43-NS hassome features as follows. (1) high...

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Part Number:
HMPSA43-NS
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Description

The HMPSA43-NS belongs to the HMPSA43 series. It is a NPN high voltage silicon transistor which is made by the MICROELECTRONICS CORP.

The HMPSA43-NS has some features as follows. (1) high collector-emitter breakdown voltage; (2) low collector-emitter saturation voltage; (3) for complementary with PNP type HMPSA93.

The following is the description about HMPSA43-NS's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 200 V and collector to emitter voltage(VCEO) is 200 V,emitter to base voltage(VEBO) is 6 V; (4): IC collector current is 500 mA; (5): the minimum BVCBO is 200 V when IC 100 A and IE is 0 ; (6): the minimum BVCEO is 200 V when IC is 1 mA and IB is 0,and BVEBO is 6 V at IE is 10 A and IC is 0; (7): the maximum ICBO is 100 nA when VCB is 200 V and IE is 0,IEBO is 100 nA at VEB is 6 V and IC is 0; (8): the maximum VCE(sat) is 350 mV at the condition of IC is 1 mA and IB is 2 mA; (9): the minimum fT is 50 MHz at IC is 10 mA,VCE is 20 V and f is 100 MHz. If you want to know more information about the HMPSA43-NS ,please download the datasheet at www.seekic.com.




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