HMPSA44-SD

DescriptionThe HMPSA44-SD belongs to the HMPSA44 series. It is a NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is designed for application that requires high voltage. The HMPSA44-SD hassome features as follows. (1) high breakdown voltage which is 400 V at ...

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SeekIC No. : 004364790 Detail

HMPSA44-SD: DescriptionThe HMPSA44-SD belongs to the HMPSA44 series. It is a NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is designed for application that requires high...

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Part Number:
HMPSA44-SD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Description

The HMPSA44-SD belongs to the HMPSA44 series. It is a NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is designed for application that requires high voltage.

The HMPSA44-SD has some features as follows. (1) high breakdown voltage which is 400 V at IC is 1 mA; (2) high current gain; (3) complementary to HMPSA94.

The following is the description about HMPSA44-SD's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 400 V and collector to emitter voltage(VCEO) is 400 V,emitter to base voltage(VEBO) is 6 V; (4): IC collector current is 300 mA; (5): the minimum BVCBO is 400 V when IC 100 A and IE is 0 ; (6): the minimum BVCEO is 400 V when IC is 1 mA and IB is 0,and BVEBO is 6 V at IE is 10 A and IC is 0; (7): the maximum ICBO is 100 nA when VCB is 400 V and IE is 0,IEBO is 100 nA at VEB is 4 V and IC is 0,ICES is 500 nA at VCE is 400 V and VEB is 0; (8): the maximum VCE(sat) is 350 mV at the condition of IC is 1 mA and IB is 0.1 mA; If you want to know more information about the HMPSA44-SD,please download the datasheet at www.seekic.com.




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