HMS1M32M8AZ8A

Features: ` Access times : 10, 12, 15, 17 and 20ns` High-density 4MByte design` High-reliability, high-speed design`Single + 5V ±0.5V power supply`Easy memory expansion with /CE and /OE functions` All inputs and outputs are TTL-compatible` Industry-standard pinout` Part identification- HMS1M32M8A ...

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SeekIC No. : 004364806 Detail

HMS1M32M8AZ8A: Features: ` Access times : 10, 12, 15, 17 and 20ns` High-density 4MByte design` High-reliability, high-speed design`Single + 5V ±0.5V power supply`Easy memory expansion with /CE and /OE functions` A...

floor Price/Ceiling Price

Part Number:
HMS1M32M8AZ8A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

` Access times : 10, 12, 15, 17 and 20ns
` High-density 4MByte design
` High-reliability, high-speed design
`Single + 5V ±0.5V power supply
`Easy memory expansion with /CE and /OE functions
` All inputs and outputs are TTL-compatible
` Industry-standard pinout
` Part identification
- HMS1M32M8A : 64Pin SIMM Design
- HMS1M32Z8A : 64Pin ZIP Design
Pin-Compatible with the HMS1M32M8A







Pinout






Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
8W
Storage Temperature
TSTG
-65 to +150
Operating Temperature
TA
0 to +70

`Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.








Description

The HMS1M32M8AZ8A is a high-speed static random access memory (SRAM) module containing 1,048,576 words
organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 64-pin, doublesided,
FR4-printed circuit board. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory HMS1M32M8AZ8A when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.








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