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HMS1M32M8LA

Features: · Part identification- HMS1M32M8LA : SIMM design· Access times : 55ns, 70ns· High-density 4MByte design· High-reliability, low-power design· Single + 5V ±0.5V power supply· Low data retention voltage : 2V(min)· Three state output and TTL-compatible· FR4-PCB design· Low profile 72-Pin SIM...

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SeekIC No. : 004364811 Detail

HMS1M32M8LA: Features: · Part identification- HMS1M32M8LA : SIMM design· Access times : 55ns, 70ns· High-density 4MByte design· High-reliability, low-power design· Single + 5V ±0.5V power supply· Low data retent...

HMS1M32M8LA Data Sheet

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Part Number:
HMS1M32M8LA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Part identification
- HMS1M32M8LA : SIMM design
· Access times : 55ns, 70ns
· High-density 4MByte design
· High-reliability, low-power design
· Single + 5V ±0.5V power supply
· Low data retention voltage : 2V(min)
· Three state output and TTL-compatible
· FR4-PCB design
· Low profile 72-Pin SIMM




Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss

Voltage on Vcc Supply Relative to Vss

Power Dissipation

Storage Temperature

Operating Temperature		 VIN,OUT

VCC

PD

TSTG

TA		 -0.5V to +7.0V

-0.5V to +7.0V

8W

-65°C to +150°C

0°C to +70°C

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board. The HMS1M32M8LA also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable nputs, /CE0, /CE1, /CE2, /CE3, /CE4, /CE5, /CE6, /CE7) are used to enable the module's 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.

Data is written into the SRAM memory HMS1M32M8LA when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS1M32M8LA is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.






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