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Part Number: HMS51232Z4V
Description: The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288 words...


Description: The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288 words...
The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.
PD0 to PD3 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.
|
PARAMETER |
SYMBOL |
RATING |
| Voltage on Any Pin Relative to Vss |
VIN,OUT |
-0.5V to +4.6V |
| Voltage on Vcc Supply Relative to Vss |
VCC |
-0.5V to +4.6V |
| Power Dissipation |
PD |
4W |
| Storage Temperature |
TSTG |
-65 to +150 |
| Operating Temperature |
TA |
0 to +70 |
HMS08A18-10S-DT10D
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