Purchase HN1C03F, In-stock HN1C03F From SeekIC.
MFG:TOSHIBA
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HN1C03F
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DataSheet
General Description
HN1C03F Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 20 | V |
| Emitter-base voltage | VEBO | 25 | V |
| Collector Current | IC | 300 | mA |
| Base current | IB | 60 | mA |
| Collector power dissipation | PC* | 300 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating
HN1C03F Typical Application
`Including two devices in SM6 (Super mini type with 6 leads)
`High emitter-base voltage: VEBO = 25V (min)
`High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)
`Low on resistance: RON = 1 (typ.)(IB = 5mA)
`High emitter-base voltage: VEBO = 25V (min)
`High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)
`Low on resistance: RON = 1 (typ.)(IB = 5mA)
HN1C03F Connection Diagram
HN1C03F
PDF/DataSheet Download
- Datasheet: HN1C03F
- File Size: 202222 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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