Purchase HN1D04FU, In-stock HN1D04FU From SeekIC.
MFG:TOSHIBA D/C:SOT-323-6
- Table of contents:
HN1D04FU
-
Suppliers
DataSheet
General Description
HN1D04FU Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit |
| Maximum (peak) reverse voltage |
VRM |
85 |
V |
| Reverse voltage |
VR |
80 |
V |
| Maximum (peak) forward current |
IFM |
300* |
mA |
| Average forward current |
IO |
100* |
mA |
| Surge current (10ms) |
IFSM |
2* |
A |
| Power dissipation |
P |
200** |
mW |
| Junction temperature |
Tj |
150 |
|
| Storage temperature |
Tstg |
−55~150 |
|
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating
HN1D04FU Features
·Low forward voltage : VF(3) = 0.90V (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance : CT = 0.9pF (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance : CT = 0.9pF (typ.)
HN1D04FU Connection Diagram
HN16
PDF/DataSheet Download
- Datasheet: HN16
- File Size: 476970 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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