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HN1L02FU

Features: ·2.5V gate drive·Low threshold voltag Q1: Vth = 0.5~1.5V Q2: Vth =−0.5~−1.5V·High speed·Small packagePinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 10 V Drain current ID 50 mA ...

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HN1L02FU: Features: ·2.5V gate drive·Low threshold voltag Q1: Vth = 0.5~1.5V Q2: Vth =−0.5~−1.5V·High speed·Small packagePinoutSpecifications Characteristic Symbol Rating Unit Drain-S...

HN1L02FU Data Sheet

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Part Number:
HN1L02FU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·2.5V gate drive
·Low threshold voltag Q1: Vth = 0.5~1.5V Q2: Vth =−0.5~−1.5V
·High speed
·Small package


Pinout

Connection Diagram


Specifications

Characteristic Symbol Rating Unit
Drain-Source voltage VDS 20 V
Gate-Source voltage VGSS 10 V
Drain current ID 50 mA
Characteristic Symbol Rating Unit
Drain-Source voltage VDS -20 V
Gate-Source voltage VGSS -7 V
Drain current ID -50 mA
Characteristic Symbol Rating Unit
Drain power dissipation PD* 200 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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