Purchase HN1V02H, In-stock HN1V02H From SeekIC.
- Table of contents:
HN1V02H
-
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DataSheet
General Description
HN1V02H Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit |
| Reverse voltage |
VR |
16 |
V |
| Junction temperature |
Tj |
125 |
|
| Storage temperature range |
Tstg |
−55~125 |
|
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("HandlingPrecautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and timated failure rate,etc).
HN1V02H Features
• High capacitance ratio: C1 V/C8 V = 19.5 (typ.)
• High Q: Q = 200 (min)
• Including two devices in FM8 package (flat pack mini 8 pin)
• Low voltage operation: VR = 1~8 V
• High Q: Q = 200 (min)
• Including two devices in FM8 package (flat pack mini 8 pin)
• Low voltage operation: VR = 1~8 V
HN1V02H Connection Diagram
HN1V02H
PDF/DataSheet Download
- Datasheet: HN1V02H
- File Size: 89078 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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