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HN29V2G74WT-30

Features: • On-board single power supply: VCC = 3.0 V to 3.6 V• Operation Temperature range: Ta = 0 to +70°C• Memory organization- Memory array: (2048+64) bytes * 16384 page * 4 Bank * 2 -Page size: (2048+64) bytes * 2 -Block size: (2048+64) bytes * 2 page...

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SeekIC No. : 004364989 Detail

HN29V2G74WT-30: Features: • On-board single power supply: VCC = 3.0 V to 3.6 V• Operation Temperature range: Ta = 0 to +70°C• Memory organization- Memory array: (2048+64) bytes * 16384 pag...

HN29V2G74WT-30 Data Sheet

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Part Number:
HN29V2G74WT-30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• On-board single power supply: VCC = 3.0 V to 3.6 V
• Operation Temperature range: Ta = 0 to +70°C
• Memory organization
- Memory array: (2048+64) bytes * 16384 page * 4 Bank * 2
 -Page size: (2048+64) bytes * 2
 -Block size: (2048+64) bytes * 2 page * 2
 -Page Register: (2048+64) bytes * 4 Bank * 2
• Multi level memory cell
- 2bit/cell
• Automatic program
 -Page program
- Multi bank program
 -Cache program
 -2 page cache program
• Automatic Erase
 -Block Erase
 -Multi Bank Block Erase
• Access time
 -Memory array to register (1st access time): 100 s max
 -Serial access: 35 ns min


Pinout

Connection Diagram


Description

The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. HN29V2G74WT-30 achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13m process technology and AG-AND (Assist Gate-AND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.




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