HN2E05J

Q1(Transistor)
Collector-base voltage V_CBO ..................−50 V
Collector-emitter voltage V_CEO.............. −50 V
Emitter-base voltage V_EBO ....................−10 V
Collector current I_C ...........................−100 mA
Q2(Diode)
Maximum (peak) reverse voltage V_RM..... 85 V
Reverse voltage V_R .................................80 V
Maximum (peak) forward current I_FM...200 mA
Average forward current I_O ................100 mA
Surge current (10ms) I_FSM ........................1 A
Q1, Q2 Common
Collector power dissipation P_C*........ 300 mW
Junction temperature T_j ......................150
Storage temperature range T_stg .....−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

* Total rating. 200mW per 1 element must not be exceeded.