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HN2S01F

Features: `HN2S01F is composed of 3 independent diodes. `Low reverse current: VF= 0.23V (typ.) @I F = 5mAPinoutSpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward cu...

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SeekIC No. : 004365013 Detail

HN2S01F: Features: `HN2S01F is composed of 3 independent diodes. `Low reverse current: VF= 0.23V (typ.) @I F = 5mAPinoutSpecifications Characteristic Symbol Rating Unit Maximum (peak) re...

HN2S01F Data Sheet

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Part Number:
HN2S01F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`HN2S01F is composed of 3 independent diodes.  
`Low reverse current: VF = 0.23V (typ.) @I F = 5mA 
 


Pinout

Connection Diagram Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
300
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
-55~125
Operating temperature range
Topr
-40~100

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook "Handling Precautions"/"Derating Concept
and Methods") and individual reliability data (i.e. reliability treport and estimated failure
rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
      In the case of using 2 ro 3 diodes, the absolute maximum ratings
      per diodes is 75  of the single diode one. 
 


Description

HN2S01F:Low Voltage High Speed Switching Application 
 


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