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HN4G01J

ApplicationQ1· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)Q2· Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count...

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SeekIC No. : 004365028 Detail

HN4G01J: ApplicationQ1· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (ty...

HN4G01J Data Sheet

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Part Number:
HN4G01J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

Q1
·  Small package (Dual type)
·  High voltage and high current
: VCEO = 50V, IC = 150mA (max)
·  High hFE : hFE = 120~400
·  Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2
·  Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
Q1 : 2SC4837F
Q2 : RN1103F




Specifications

Q1 Absolute Maximum Ratings (Ta = 25)
Parameter
Symbol
Ratings
Unit
Collector-Emitter Voltage
VCEO
60
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA


Q2 Absolute Maximum Ratings (Ta = 25)
Parameter
Symbol
Ratings
Unit
Collector-Emitter Voltage
VCEO
50
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
10
V
Collector current
IC
100
mA

Absolute Maximum Ratings (Ta = 25) (Q1,Q2Common)

Parameter
Symbol
Rating
Unit
Collector dissipation
PC  *
300
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150



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