ApplicationQ1· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)Q2· Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count...
HN4G01J: ApplicationQ1· Small package (Dual type)· High voltage and high current: VCEO = 50V, IC = 150mA (max)· High hFE : hFE = 120~400· Excellent hFE linearity: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (ty...
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Q1
· Small package (Dual type)
· High voltage and high current
: VCEO = 50V, IC = 150mA (max)
· High hFE : hFE = 120~400
· Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2
· Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
Q1 : 2SC4837F
Q2 : RN1103F
| Parameter |
Symbol |
Ratings |
Unit |
| Collector-Emitter Voltage |
VCEO |
60 |
V |
| Collector-Base Voltage |
VCBO |
50 |
V |
| Emitter-Base Voltage |
VEBO |
5 |
V |
| Collector current |
IC |
150 |
mA |
| Base current |
IB |
30 |
mA |
| Parameter |
Symbol |
Ratings |
Unit |
| Collector-Emitter Voltage |
VCEO |
50 |
V |
| Collector-Base Voltage |
VCBO |
50 |
V |
| Emitter-Base Voltage |
VEBO |
10 |
V |
| Collector current |
IC |
100 |
mA |
Absolute Maximum Ratings (Ta = 25) (Q1,Q2Common)
| Parameter |
Symbol |
Rating |
Unit |
| Collector dissipation |
PC * |
300 |
mW |
| Junction temperature |
Tj |
150 |
|
| Storage temperature |
Tstg |
-55 to +150 |