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HN7G02FU

Specifications Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -50 V Emitter-base voltage ...

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HN7G02FU: Specifications Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V ...

HN7G02FU Data Sheet

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HN7G02FU
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Specifications

Q1 (transistor) Maximum Ratings (Ta = 25°C)

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA

Q2 (MOS-FET) Maximum Ratings (Ta =25°C)

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
Drain current
ID
50
mA

 




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