Transistors Bipolar (BJT) Vceo=50V Vds=30V Ic=100mA Id=100mA
HN7G09FE(TE85L,F): Transistors Bipolar (BJT) Vceo=50V Vds=30V Ic=100mA Id=100mA
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Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
US $.03 - .05 / Piece
Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V | ||
| Emitter- Base Voltage VEBO : | 10 V | DC Collector/Base Gain hfe Min : | 80 | ||
| Configuration : | Dual | Mounting Style : | SMD/SMT | ||
| Package / Case : | ES-6 | Packaging : | Reel |