HPMX-3003

Features:

• GaAs MMIC LNA-Switch- Power Amp for 1.5 2.5 GHz Transceiver Use
• LNA: 2.2 dB NF, 13 dB Ga @ 1.9 GHz
• Switch: 55 dBm OIP @ 1.9 GHz
• Power Amp: +4 dBm in, +27.5 dBm out, 23.5 dB Gain, 35% hadd @ 1.9 GHz
• 3 or 5 V Operation
• JEDEC Standard SSOP-28 Surface Mount Package


Application

• Personal Communications Systems (PCS)
• Cordless Telephone Systems
• 2400 MHz Wireless LANs and ISM Band Spread Spectrum Applications


Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1] LNA	Absolute Maximum[1] Switch	Absolute Maximum[1] Power Amp
Pdiss	Power Dissipation[2,3]	mW	250[2,3]		1500[2,3]
Pin	CW RF Input Power	dBm	+20	+33	+20
Vd	Device Voltage	V	8	-	8
Vcont	Control Voltage	V	-	-6	-
Tch	Channel Temperature		175	175	175
TSTG	Storage Temperature		-65 to 150	-65 to 150	-65 to 150

Notes:
1. Operation of this device above any of these limits may cause permanent damage.
2. Tcase = 25°C
3. Derate at 18.2 mW/°C for TC > 78°C
Recommended operating range of Vcc = 2.7 to 5.5 V, Ta = -40 to + 85 °C


Description

Hewlett-Packard's HPMX-3003 combines a Low Noise Amplifier, GaAs MMIC switch, and 27.5 dBm power amp in a single miniature 28 lead surface mount plastic package. This RFIC would typically serve as the "front end" and power stage of a battery operated wireless transceiver for PCS or ISM band use. Each section of the RFIC can also be used independently.

The HPMX-3003 single-supply LNA makes use of the low noise characteristics of GaAs to create a matched, broadband amplifier with target performance of 13 dB gain and 2.2 dB noise figure. The switch provides +55 dBm IP3 for linear operation. The power amplifier produces up to 820 mW with 35% power added efficiency.

The HPMX-3003 is fabricated with Hewlett-Packard's GaAs MMIC process, and features a nominal 0.5 micron recessed Schottkybarrier- gate, gold metallization, and silicon nitride passivation to produce MMICs with superior performance, uniformity and reliability.