HRF3205

MOSFET TO-220AB N-Ch Power

product image

HRF3205 Picture
SeekIC No. : 00159968 Detail

HRF3205: MOSFET TO-220AB N-Ch Power

floor Price/Ceiling Price

Part Number:
HRF3205
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• 100A, 55V (See Note)
• Low On-Resistance, rDS(ON) = 0.008W
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Pinout

  Connection Diagram


Specifications

Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20kW) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20V
V
Drain Current Drain Current
ID
100
A
Drain Current Pulsed Drain Current (Note 2)
IDM
390
A
Pulsed Avalanche Rating
EAS
Figure 10
Power Dissipation
PD
175
W
Derate Above 25oC
1.17
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260



Description

HRF3205 are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. HRF3205  can be operated directly from integrated circuits.




Parameters:

Technical/Catalog InformationHRF3205
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs8 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max175W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HRF3205
HRF3205



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Prototyping Products
DE1
Semiconductor Modules
Cable Assemblies
Circuit Protection
View more